特诺半导体有限公司
功率半导体器件的创新者
SIC MOS
11
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产品名称
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VDS（V）
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ID（A）
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RDSON（Ω）（@Vgs=10V）
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VGS（TH）(V)
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QG（nC）
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封装形式
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规格书 | 状态 | 更新日期
|
|---|---|---|---|---|---|---|---|---|---|
| TND80R900S | 800 | 4 | 1100~1200 | 3.2 | 8.0 | TO-252 |
 |
2026-08-03 | |
| TND80R600S | 800 | 7 | 720~780 | 3.0 | 7.0 | TO-252 |
|
2026-08-03 | |
| TND80R480S | 800 | 8.8 | 560~600 | 3.5 | 9.0 | TO-252 |
|
2026-08-03 | |
| TND80R380S | 800 | 11 | 460~490 | 3.5 | 10.6 | TO-252 |
|
2026-08-03 | |
| TND80R260S | 800 | 15 | 330-360 | 3.5 | 11.2 | TO-252 |
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2026-08-03 | |
| TND80R180S | 800 | 20 | 230~250 | 3.5 | 10 | TO-252 |
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2026-08-03 | |
| TND65R900S | 650 | 4 | Vgs=10V 低压驱动时导通电阻上升，典型约 1100~1200mΩ | 3.2V | 8 | TO-252 |
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2026-08-03 | |
| TND65R600S | 650 | 7A | Vgs=10V 驱动偏低压，导通电阻会更高，典型约 750~820mΩ | 3.2V（25℃栅极开启阈值电压典型值） | 1.1nC | TO-252 |
|
2026-08-03 | |
| TND65R500S | 650 | 6 | 500 | 3.8 | 9.0 | TO-252 |
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2026-08-01 | |
| TND65R480S | 650 | 8.8 | 480 | 3.8 | 9.0 | TO-252 |
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2026-08-01 | |
| TND65R380S | 650 | 11 | 380 | 3.5 | 10.6 | TO-252 |
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2026-08-01 | |
| TND65R260S | 650V | 15A | 260mΩ@VGS=15V；180mΩ@VGS=18V（25℃） | 2.8V~4.0V（典型 3.5V） | 11.2nC | TO-252(DPAK) |
|
2026-08-01 |
